• DocumentCode
    2508814
  • Title

    A 21.8% GaInP2/GaAs tandem solar cell

  • Author

    Olsen, J.M. ; Kurtz, S.R. ; Kibbler, A.E.

  • Author_Institution
    Solar Energy Res. Inst., Golden, CO, USA
  • fYear
    1988
  • fDate
    1988
  • Firstpage
    777
  • Abstract
    A two-terminal, monolithic cascade solar cell is reported with an efficiency of 21.8% (Jsc=11.8 mA/cm2, Voc=2.19 V, and fill factor=85% under AM1.5 global conditions, cell area=1 cm2). The device structure is two n-on-p cells, Ga0.5In0.5P (GaInP2) and GaAs, with a GaAs tunnel diode cell interconnect. The films were grown in a vertical flow MOCVD (metal-organic chemical vapor deposition) reactor at 700 degrees C, using trimethylgallium, trimethylindium, arsine, and phosphine, with diethylzinc and hydrogen selenide as dopants. The bandgaps of the GaInP2 and GaAs layers were 1.9 and 1.42 eV, respectively. The tandem combination of these two materials is lattice matched and has a theoretical efficiency of 34%.
  • Keywords
    CVD coatings; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; solar cells; 2.19 V; 21.8 percent; 700 degC; GaAs tunnel diode cell interconnect; GaInP2-GaAs solar cell; arsine; diethylzinc; lattice matched; metal-organic chemical vapor deposition; monolithic cascade solar cell; n-on-p cells; phosphine; semiconductor; tandem solar cell; trimethylgallium; trimethylindium; vertical flow MOCVD; Chemical vapor deposition; Diodes; Gallium arsenide; Gold; Hydrogen; Inductors; Lattices; MOCVD; Optical filters; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Solar power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
  • Conference_Location
    Las Vegas, NV, USA
  • Type

    conf

  • DOI
    10.1109/PVSC.1988.105809
  • Filename
    105809
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2508814