• DocumentCode
    2508857
  • Title

    Development of a self-supporting, transparent AlGaAs top solar cell for mechanical attachment to an existing solar cell

  • Author

    Negley, Gerald H. ; Terranova, Nancy E. ; McNeely, James B. ; Barnett, Allen M.

  • Author_Institution
    Astrosyst. Inc., Newark, DE, USA
  • fYear
    1988
  • fDate
    1988
  • Firstpage
    781
  • Abstract
    A technique for fabricating AlGaAs solar cells on transparent AlGaAs substrates has been developed which utilizes the most advanced wide-bandgap material on a transparent substrate. The rugged, self-supporting, transparent AlGaAs top solar cell can be mechanically stacked on any well-developed existing solar cell. The key to this success is the growth technique, liquid-phase epitaxy (LPE). Fabrication of tandem or triple stacks is impossible with this transparent, self-supporting AlGaAs device. To obtain high stack efficiencies, the top solar cell must be state-of-the-art. A 1.93 eV AlGaAs top cell results in two-stack solar cells with efficiencies over 30% AM0 and triple stacks approaching 35% AM0. Transmission of 91% of the photons less energetic than the top solar cell bandgap has been demonstrated for the self-supporting AlGaAs substrate. The design rules for the tandem structure and progress in the development of the transparent AlGaAs top solar cell are discussed.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; liquid phase epitaxial growth; semiconductor growth; solar cells; AlGaAs solar cells; liquid-phase epitaxy; mechanical attachment; semiconductor; tandem solar cells; transparent AlGaAs substrates; triple stacks; two-stack solar cells; wide-bandgap material; Epitaxial growth; Fabrication; Gallium arsenide; Monolithic integrated circuits; Photonic band gap; Photonic integrated circuits; Photovoltaic cells; Solar radiation; Substrates; Wavelength conversion;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
  • Conference_Location
    Las Vegas, NV, USA
  • Type

    conf

  • DOI
    10.1109/PVSC.1988.105810
  • Filename
    105810