High Voc, 1300 ohm cm, 10 to 25 micrometer thick, single crystal silicon membrane BCA cells

1300 Omega -cm, 10-25 mu m-thick, single-crystal base, silicon membrane BCA solar cells with 4 mil-thick, highly doped, epitaxial layer supports were made. The active area value of I_sc achieved for 10 mu m membranes was 31 mA/cm² for AM1 sunlight intensity; values of V_oc were 0.55 V for AM1 illumination, 0.64 V for 137 mW/cm² concentrated sunlight, and 0.73 V for 70*AM1 concentrated sunlight, using -1.5 mV/^oC V_oc temperature coefficients. Data on results of high-energy particle bombardment of silicon solar cells of various resistivities and on bombardment results of BSF 10 Omega -cm cells of various thicknesses are reviewed. From analysis of these and other data, it is predicted that the cells are the most radiation-damage-resistant silicon cells ever made and that they are superior to GaAs and InP cells in both high-temperature and radiation-damage environments.