• DocumentCode
    2508908
  • Title

    A new light trapping structure for very-thin, high-efficiency silicon solar cells

  • Author

    Uematsu, T. ; Ida, M. ; Hane, K. ; Hayashi, Y. ; Saitoh, T.

  • Author_Institution
    Hitachi Ltd., Tokyo, Japan
  • fYear
    1988
  • fDate
    1988
  • Firstpage
    792
  • Abstract
    A novel cell structure with aligned V-grooves on each side is proposed to realize very thin silicon solar cells. The thickness can be less than 50 mu m without reduction of mechanical strength. This structure provides a very high light-trapping effect. The light-generated current in this structure is calculated as 40.58 mA/cm2 under AM1.5 100 mW/cm2 sunlight. This structure is expected to realize high efficiency, close to the limiting efficiency of around 29% and to yield fruitful results in concentrator cells.
  • Keywords
    elemental semiconductors; semiconductor thin films; silicon; solar cells; 29 percent; Si solar cells; V-grooves; concentrator cells; high-efficiency; light trapping structure; mechanical strength; semiconductor; Anisotropic magnetoresistance; Corrugated surfaces; Crystallization; Etching; Fabrication; Laboratories; Photovoltaic cells; Silicon; Surface texture; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
  • Conference_Location
    Las Vegas, NV, USA
  • Type

    conf

  • DOI
    10.1109/PVSC.1988.105813
  • Filename
    105813
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2508908