Interest of 0.15 μm gate length InGaAs/InP composite channel HEMTs for millimeter-wave MMIC amplifiers

Author

Chevalier, P. ; Dessenne, F. ; Badirou, M. ; Thobel, J.L. ; Fauquembergue, R.

Author_Institution

Inst. d´´Electron. et de Microelectron. du Nord, CNRS, Villeneuve d´´Ascq, France

fYear

1997

fDate

24-25 Nov 1997

Firstpage

193

Lastpage

198

Abstract

This paper outlines the use of an InGaAs/InP channel allows to reduce drastically impact ionisation effects and consequently output conductance of the device: 85 mS/mm for a composite channel compared to 145 mS/mm for the conventional channel. Using a composite channel, device transconductance is enhanced from 1 S/mm to 1.2 S/mm and cut-off frequency F_MAX increases by 50%. Thus a 0.15 μm gate length InGaAs/lnP composite channel HEMT shows a current gain cut-off frequency F_T of 151 GHz and a maximum unilateral gain cut-off frequency F_MAX of 225 GHz. The comparison of passivated and non-passivated devices highlights the influence of the feedback capacitance on RF performance. 0.15 μm gate length InGaAs/InP/InP n+ composite channel HEMTs have also been fabricated. Devices exhibit state of the art performance at 60 GHz, with an output power density of 350 mW/mm, 12% power-added-efficiency (PAE) and 6.2 dB of linear gain

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; capacitance; field effect MIMIC; gallium arsenide; impact ionisation; indium compounds; integrated circuit technology; millimetre wave amplifiers; passivation; 0.15 micron; 1.2 S/mm; 12 percent; 6.2 dB; 60 to 225 GHz; 85 mS/mm; EHF; InGaAs-InP; InGaAs/InP composite channel HEMTs; MIMIC; feedback capacitance; impact ionisation effects; millimeter-wave MMIC amplifiers; nonpassivated devices; output conductance; passivated devices; Capacitance; Cutoff frequency; Feedback; HEMTs; Impact ionization; Indium gallium arsenide; Indium phosphide; Power generation; Radio frequency; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on

Conference_Location

London

Print_ISBN

0-7803-4135-X

Type

conf

DOI

10.1109/EDMO.1997.668598

Filename

668598