Title :
Theoretical investigation of InP/InGaAs HBTs
Author :
Sheng, H. ; Rezazadeh, A.A. ; Wake, D.
Author_Institution :
Dept. of Electron. Eng., King´´s Coll., London, UK
Abstract :
The DC characteristics of InP/InGaAs HBTs with spacer layers are studied using a physics-based analytical model. This model is based on the thermionic-field-emission (tfe) process at the base/emitter (b/e) hetero-interface and the diffusion current in the quasi-neutral region. Current transport with regard to the spacer layer is studied. I-V characteristics of the HBT are then modeled and these results are compared with the measured data
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; DC characteristics; I-V characteristics; InP-InGaAs; InP/InGaAs HBTs; base/emitter hetero-interface; current transport; diffusion current; physics-based analytical model; quasi-neutral region; spacer layers; thermionic-field-emission; Boundary conditions; Dielectric constant; Diffusion processes; Doping; Electron emission; Equations; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Tunneling;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
DOI :
10.1109/EDMO.1997.668599
