DocumentCode
2509190
Title
Present status and future prospects of InP solar cells
Author
Yamaguchi, Masafumi
Author_Institution
Opto-electron. Lab., NTT, Kanagawa, Japan
fYear
1988
fDate
1988
Firstpage
880
Abstract
Recent progress in the research and development of high-efficiency and superior-radiation-resistance InP solar cells is reviewed. High-efficiency cells with total-area efficiencies greater than 20% at AM 1.5 and 18% at AM0 have been successfully fabricated. It is demonstrated that InP cells have more radiation resistance than Si or GaAs solar cells. The superior radiation tolerance of InP cells is concluded to be due to the lower migration energies of radiation-defects in InP compared to those in GaAs. The results show that InP cells have great potential for space power applications.
Keywords
III-V semiconductors; indium compounds; solar cells; space vehicle power plants; III-V semiconductors; InP solar cells; efficiencies; migration energies; radiation resistance; research and development; space power; Diode lasers; Electron devices; Gallium arsenide; Indium phosphide; Laboratories; Photonic band gap; Photovoltaic cells; Research and development; Semiconductor materials; Surface resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location
Las Vegas, NV, USA
Type
conf
DOI
10.1109/PVSC.1988.105829
Filename
105829
Link To Document