• DocumentCode
    2509227
  • Title

    Production of indium phosphide solar cells for space power generation

  • Author

    Okazaki, H. ; Takamoto, T. ; Takamura, H. ; Kamei, T. ; Ura, M. ; Yamamoto, A. ; Yamaguchi, M.

  • Author_Institution
    Nippon Min. Co. Ltd., Saitama, Japan
  • fYear
    1988
  • fDate
    1988
  • Firstpage
    886
  • Abstract
    A large-scale commercial process for producing high-efficiency n+-p homojunction InP solar cells is described. The n+-p junction is fabricated by diffusing sulfur into p-type InP substrates in a sealed quartz ampoule. In one diffusion cycle, 300 1*2 cm2 cells are fabricated from 50 2-in. InP wafers. The dependence of solar cell parameters on diffusion temperature and substrate carrier concentration and further improvement of cell performance by mesa etching are also discussed. The conversion efficiency of the best 2*2 cm2 cell is 16.6% (total area, one-sun, air mass zero).
  • Keywords
    III-V semiconductors; indium compounds; semiconductor device manufacture; solar cells; space vehicle power plants; sulphur; 16.6 percent; III-V semiconductors; InP:S solar cells; conversion efficiency; diffusion temperature; mesa etching; n+-p homojunction; performance; semiconductor device manufacture; space power; substrate carrier concentration; Etching; Fabrication; Indium phosphide; Laboratories; Large-scale systems; Moon; Photovoltaic cells; Production; Solar power generation; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
  • Conference_Location
    Las Vegas, NV, USA
  • Type

    conf

  • DOI
    10.1109/PVSC.1988.105830
  • Filename
    105830