DocumentCode
2509227
Title
Production of indium phosphide solar cells for space power generation
Author
Okazaki, H. ; Takamoto, T. ; Takamura, H. ; Kamei, T. ; Ura, M. ; Yamamoto, A. ; Yamaguchi, M.
Author_Institution
Nippon Min. Co. Ltd., Saitama, Japan
fYear
1988
fDate
1988
Firstpage
886
Abstract
A large-scale commercial process for producing high-efficiency n+-p homojunction InP solar cells is described. The n+-p junction is fabricated by diffusing sulfur into p-type InP substrates in a sealed quartz ampoule. In one diffusion cycle, 300 1*2 cm2 cells are fabricated from 50 2-in. InP wafers. The dependence of solar cell parameters on diffusion temperature and substrate carrier concentration and further improvement of cell performance by mesa etching are also discussed. The conversion efficiency of the best 2*2 cm2 cell is 16.6% (total area, one-sun, air mass zero).
Keywords
III-V semiconductors; indium compounds; semiconductor device manufacture; solar cells; space vehicle power plants; sulphur; 16.6 percent; III-V semiconductors; InP:S solar cells; conversion efficiency; diffusion temperature; mesa etching; n+-p homojunction; performance; semiconductor device manufacture; space power; substrate carrier concentration; Etching; Fabrication; Indium phosphide; Laboratories; Large-scale systems; Moon; Photovoltaic cells; Production; Solar power generation; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location
Las Vegas, NV, USA
Type
conf
DOI
10.1109/PVSC.1988.105830
Filename
105830
Link To Document