DocumentCode :
2509227
Title :
Production of indium phosphide solar cells for space power generation
Author :
Okazaki, H. ; Takamoto, T. ; Takamura, H. ; Kamei, T. ; Ura, M. ; Yamamoto, A. ; Yamaguchi, M.
Author_Institution :
Nippon Min. Co. Ltd., Saitama, Japan
fYear :
1988
fDate :
1988
Firstpage :
886
Abstract :
A large-scale commercial process for producing high-efficiency n+-p homojunction InP solar cells is described. The n+-p junction is fabricated by diffusing sulfur into p-type InP substrates in a sealed quartz ampoule. In one diffusion cycle, 300 1*2 cm2 cells are fabricated from 50 2-in. InP wafers. The dependence of solar cell parameters on diffusion temperature and substrate carrier concentration and further improvement of cell performance by mesa etching are also discussed. The conversion efficiency of the best 2*2 cm2 cell is 16.6% (total area, one-sun, air mass zero).
Keywords :
III-V semiconductors; indium compounds; semiconductor device manufacture; solar cells; space vehicle power plants; sulphur; 16.6 percent; III-V semiconductors; InP:S solar cells; conversion efficiency; diffusion temperature; mesa etching; n+-p homojunction; performance; semiconductor device manufacture; space power; substrate carrier concentration; Etching; Fabrication; Indium phosphide; Laboratories; Large-scale systems; Moon; Photovoltaic cells; Production; Solar power generation; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
Type :
conf
DOI :
10.1109/PVSC.1988.105830
Filename :
105830
Link To Document :
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