Optically controlled III-V GaN based avalanche transit time diode for application in terahertz communication

Author

Mukherjee, Moumita ; Roy, Sitesh Kumar

Author_Institution

Centre of Millimeterwave Semicond. Devices & Syst., Univ. of Calcutta, Kolkata

fYear

2008

fDate

21-24 Nov. 2008

Firstpage

391

Lastpage

394

Abstract

The prospects of single drift region (SDR), flat profile GaN IMPATT diode as terahertz source are studied through a simulation experiment. The study indicates that GaN IMPATT device is capable of generating high RF power (P_RF) of 14.4 W at around 0.7 THz with an efficiency of 20.0 %. The effects of photo-illumination on the GaN device is also investigated using a modified double iterative simulation scheme. Under photo-illumination, the negative conductance and the negative resistance of the device is found to decrease, while, the frequency of operation and the device quality factor shifts upward.

Keywords

III-V semiconductors; IMPATT diodes; gallium compounds; lighting; optical control; submillimetre waves; wide band gap semiconductors; GaN; III-V semiconductor; avalanche transit time diode; double iterative simulation; flat profile IMPATT diode; optical control; photo-illumination; single drift region; terahertz communication; terahertz source; Communication system control; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Optical control; Optical saturation; Radio frequency; Semiconductor diodes; Solid state circuits; Submillimeter wave communication; IMPATT diode; Optical-illumination; THz power source; Top Mounted device; Wz-GaN; parasitic series resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on

Conference_Location

Jaipur

Print_ISBN

978-1-4244-2690-4

Electronic_ISBN

978-1-4244-2691-1

Type

conf

DOI

10.1109/AMTA.2008.4762973

Filename

4762973