Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

Author

Weinberg, I. ; Swartz, C.K. ; Hart, R.E., Jr. ; Coutts, T.J.

Author_Institution

NASA Lewis Res. Center, Cleveland, OH, USA

fYear

1988

fDate

1988

Firstpage

893

Abstract

The radiation resistance of ITO/InP cells processed by DC magnetron sputtering is compared to that of standard n/p InP/GaAs homojunction cells. After 10 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistances significantly greater than that of GaAs. The relatively lower radiation resistance observed at higher fluence for the InP cell with the deepest junction depth is attributed to losses in the cell emitter region. Diode parameters obtained from I_sc-V_oc plots, data from surface Raman spectroscopy, and determinations of surface conductivity type are used to investigate the configuration of the ITO/InP cells. It is concluded that these latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide-semiconductor interface.

Keywords

III-V semiconductors; indium compounds; solar cells; 10 MeV; DC magnetron sputtering; ITO-InP; InP-GaAs; InSnO-InP; emitter; homojunction solar cells; junction depth; performance; radiation resistance; surface Raman spectroscopy; surface conductivity; Diodes; Gallium arsenide; Indium phosphide; Indium tin oxide; Photovoltaic cells; Protons; Raman scattering; Spectroscopy; Sputtering; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE

Conference_Location

Las Vegas, NV, USA

Type

conf

DOI

10.1109/PVSC.1988.105832

Filename

105832