Title :
Characterization and modeling of InP solar cells
Author :
Augustine, G. ; Smith, A.W. ; Rohatgi, A. ; Keavney, C.J.
Author_Institution :
Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
InP solar cells were modeled before and after proton irradiation using a PC-1D computer model. It was necessary to include bandgap narrowing in the n+ emitter to match the calculated and measured quantum efficiency, leakage current, and cell data simultaneously. A high-efficiency ( approximately=18.2%, AM0) InP solar cell was fabricated and modeled successfully. Guidelines are provided for achieving greater than 22% efficiency for InP cells. A 10 MeV proton irradiation with a dose of 2*1013 cm-2 reduces the cell performance of a 16.3% cell to 11% by introducing the deep levels at an Ev of +0.29 eV and an Ev of +0.52 eV. Modeling showed that this performance degradation is associated with a decrease in bulk lifetime from 0.75 to 0.028 ns with no appreciable change in front surface recombination velocity.
Keywords :
III-V semiconductors; electronic engineering computing; indium compounds; semiconductor device models; solar cells; 0.29 eV; 0.52 eV; 10 MeV; 11 percent; 16.3 percent; 18.2 percent; InP solar cells; PC-1D computer model; bandgap narrowing; bulk lifetime; deep levels; front surface recombination velocity; leakage current; performance; proton irradiation; quantum efficiency; semiconductor device models; Current measurement; Degradation; Doping; Gallium arsenide; Guidelines; Indium phosphide; Leakage current; Photonic band gap; Photovoltaic cells; Protons; Radiative recombination; Semiconductor process modeling; Wavelength measurement;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105834
