Title :
Extrinsic photoconductivity at 1550 nm and 1030 nm for THz Generation
Author :
Middendorf, J.R. ; Brown, E.R.
Author_Institution :
Depts. of Phys. & Electr. Eng., Wright State Univ., Dayton, OH, USA
Abstract :
Pulses from a 1550 and 1030 nm fiber-mode-locked laser are used to drive an ErAs:GaAs photoconductive switch, resulting in extrinsic photoconductivity and useful levels of THz (~100 μW) with the 1550-nm laser drive, but not with the 1030-nm laser. This finding supports the recent discovery that extrinsic photoconductivity is a useful mechanism in ErAs:GaAs, but the THz generation is sensitive to the specific laser drive wavelength.
Keywords :
erbium compounds; high-speed optical techniques; photoconducting switches; photoconductivity; terahertz wave devices; terahertz wave generation; ErAs:GaAs; THz generation; extrinsic photoconductivity; fiber-mode-locked laser; laser drive wavelength; photoconductive switch; wavelength 1030 nm; wavelength 1550 nm; Laser mode locking; Laser theory; Measurement by laser beam; Optical switches; Photoconductivity; Power lasers;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
DOI :
10.1109/IRMMW-THz.2012.6380210
