GaAs on Ge cell and panel technology for advanced space flight application

Author

Cavicchi, B.T. ; Lillington, D.R. ; Garlick, G.F.J. ; Glenn, G.S. ; Tobin, S.P.

Author_Institution

Spectrolab Inc., Sylmar, CA, USA

fYear

1988

fDate

1988

Firstpage

918

Abstract

Tandem junction GaAs/Ge solar cells measuring 2-cm*2-cm were fabricated with efficiencies up to 18.2% (AM0, 28 degrees C) using in-house grown material. Previously, an efficiency of 21.7% (AM0, 25 degrees C) was demonstrated. Welded tab pull strengths greater than 3.3 N (340 gms) were achieved with no electrical degradation or mechanical damage for both the front and back contacts. A panel incorporating GaAs/Ge cells was built to demonstrate this assembly technology. Modeling shows that with proper design, the thin dual-junction GaAs/Ge cells can be made with efficiencies of 24% (AM0, 28 degrees C) by improving optical coatings and reducing the effect of interface and back surface recombination.

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; solar cells; space vehicle power plants; 18.2 percent; 21.7 percent; 24 percent; GaAs-Ge solar cells; contacts; efficiencies; optical coatings; recombination; semiconductors; space vehicle power plant; tab pull strengths; Aerospace materials; Assembly; Coatings; Contacts; Degradation; Gallium arsenide; Optical design; Photovoltaic cells; Space technology; Welding;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE

Conference_Location

Las Vegas, NV, USA

Type

conf

DOI

10.1109/PVSC.1988.105838

Filename

105838