Title :
Electron radiation and annealing of MOCVD GaAs and GaAs/Ge solar cells
Author :
Chung, M.A. ; Meier, D.L. ; Szedon, J.R. ; Bartko, J.
Author_Institution :
Air Force Wright Aeronaut. Lab., Wright-Patterson AFB, OH, USA
Abstract :
A comparison of the radiation tolerances of MOCVD-grown GaAs/GaAs cells and GaAs/Ge cells was undertaken using 1 MeV electrons. The electron radiation was delivered in doses of 1*1016 cm-2 up to a total dose of 1*1017 cm-2 for GaAs/GaAs and a total dose of 7*1016 cm-2 for GaAs/Ge. Following each dose, the cells were annealed at either 250 degrees C or 300 degrees C for 1 h in nitrogen. It was found that the radiation tolerance of the GaAs/Ge cells was superior to that of the GaAs/GaAs cells. DLTS and EBIC measurements are presented.
Keywords :
CVD coatings; III-V semiconductors; annealing; electron beam effects; elemental semiconductors; gallium arsenide; germanium; semiconductor thin films; solar cells; 1 MeV; 250 degC; 300 degC; DLTS; EBIC; GaAs; GaAs-Ge; MOCVD; annealing; electron irradiation; radiation tolerance; radiation tolerances; semiconductor thin films; solar cells; Annealing; Belts; Chemicals; Doping; Electrons; Gallium arsenide; MOCVD; Nitrogen; Passivation; Photovoltaic cells;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105839
