Title :
Physical modelling of HBTs for microwave power applications
Author :
McIntosh, Paul M. ; Snowden, Christopher M.
Author_Institution :
Sch. of Electron. & Electr. Eng., Leeds Univ., UK
Abstract :
This paper presents a one-dimensional HBT physical model which can accurately simulate the characteristics of microwave power transistors. The structure of the model is briefly discussed, and simulation results for a three layer device are presented and compared with analytical results. Measured and modelled DC characteristics for a power HBT are also presented, and these show good agreement over several decades of base and collector current
Keywords :
heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; DC characteristics; HBT; microwave power transistor; one-dimensional physical model; simulation; three layer device; Analytical models; Charge carrier density; Current density; Current measurement; Doping profiles; Equivalent circuits; Heterojunction bipolar transistors; Microwave devices; Poisson equations; Semiconductor process modeling;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
DOI :
10.1109/EDMO.1997.668601
