• DocumentCode
    2509460
  • Title

    A variation-aware 0.57-V set-associative cache with mixed associativity using 7T/14T SRAM

  • Author

    Jung, Jinwook ; Nakata, Yohei ; Okumura, Shunsuke ; Kawaguchi, Hiroshi ; Yoshimoto, Masahiko

  • Author_Institution
    Grad. Sch. of Syst. Inf., Kobe Univ., Kobe, Japan
  • fYear
    2012
  • fDate
    6-8 June 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, we present a novel cache scheme which efficiently reduces the minimum operating voltage (Vmin) despite manufacturing-induced defective SRAM cells. The proposed low-voltage scheme exploits the fact that locations of defective SRAM cells are usually non-uniformly scattered. It also leverages the reliable characteristics of 7T/14T SRAM and allows associativites in each index to be different. Our evaluation results show that the proposed cache can reduce Vmin of 64 KB 8-way set-associative cache by 80 mV within 7.81% capacity and 5.22% area overhead.
  • Keywords
    SRAM chips; cache storage; low-voltage scheme; manufacturing-induced defective SRAM cell; minimum operating voltage; mixed associativity; variation-aware 0.57-V set-associative cache; Arrays; Indexes; Integrated circuit reliability; Low voltage; Random access memory; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Faible Tension Faible Consommation (FTFC), 2012 IEEE
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4673-0822-9
  • Type

    conf

  • DOI
    10.1109/FTFC.2012.6231728
  • Filename
    6231728