DocumentCode
2509460
Title
A variation-aware 0.57-V set-associative cache with mixed associativity using 7T/14T SRAM
Author
Jung, Jinwook ; Nakata, Yohei ; Okumura, Shunsuke ; Kawaguchi, Hiroshi ; Yoshimoto, Masahiko
Author_Institution
Grad. Sch. of Syst. Inf., Kobe Univ., Kobe, Japan
fYear
2012
fDate
6-8 June 2012
Firstpage
1
Lastpage
4
Abstract
In this paper, we present a novel cache scheme which efficiently reduces the minimum operating voltage (Vmin) despite manufacturing-induced defective SRAM cells. The proposed low-voltage scheme exploits the fact that locations of defective SRAM cells are usually non-uniformly scattered. It also leverages the reliable characteristics of 7T/14T SRAM and allows associativites in each index to be different. Our evaluation results show that the proposed cache can reduce Vmin of 64 KB 8-way set-associative cache by 80 mV within 7.81% capacity and 5.22% area overhead.
Keywords
SRAM chips; cache storage; low-voltage scheme; manufacturing-induced defective SRAM cell; minimum operating voltage; mixed associativity; variation-aware 0.57-V set-associative cache; Arrays; Indexes; Integrated circuit reliability; Low voltage; Random access memory; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Faible Tension Faible Consommation (FTFC), 2012 IEEE
Conference_Location
Paris
Print_ISBN
978-1-4673-0822-9
Type
conf
DOI
10.1109/FTFC.2012.6231728
Filename
6231728
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