Asymmetric tunneling metal-insulator-metal diode for high frequency application

Author

Jeong Hee Shin ; Jaehan Im ; Sang-Sik Shin ; Inho Choi ; Ji-Woong Choi ; Jae Eun Jang

Author_Institution

Dept. of Inf. & Commun. Eng., Daegu Gyeongbuk Inst. of Sci. & Technol. (DGIST), Daegu, South Korea

fYear

2012

fDate

23-28 Sept. 2012

Firstpage

1

Lastpage

3

Abstract

To rectify high frequency AC bias, the characteristics and the structure of asymmetric tunneling metal-insulator-metal (MIM) diode has been studied. Needle like nanometer level electrode structure makes a high probability of electron tunneling due to high electrical field density on the electrode structure. The result enhances the asymmetric characteristic of current-voltage at negative to positive bias sweep, which induces a low leakage current level and a high rectifying efficiency.

Keywords

MIM devices; electrodes; nanoelectronics; needles; tunnel diodes; tunnelling; MIM diode; asymmetric tunneling metal-insulator-metal diode; current-voltage asymmetric characteristic; electron tunneling; high electrical field density; high frequency AC bias; high frequency application; nanometer level electrode structure; needle; negative-to-positive bias sweep; Carbon nanotubes; Electrodes; Metals; Rectifiers; Schottky diodes; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on

Conference_Location

Wollongong, NSW

ISSN

2162-2027

Print_ISBN

978-1-4673-1598-2

Electronic_ISBN

2162-2027

Type

conf

DOI

10.1109/IRMMW-THz.2012.6380215

Filename

6380215