Title :
Impact of gate stack configuration onto the rf/analog performance of ISE MOSFET
Author :
Kaur, Ravneet ; Chaujar, Rishu ; Saxena, Manoj ; Gupta, R.S.
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, New Delhi
Abstract :
In this paper, the impact of gate stack configuration onto the RF/analog and large signal linearity characteristics of insulated shallow extension (ISE) MOSFET is explored. The key factors affecting the device performance and the physics behind it are also scrutinized. The analog performance metrics- gm/ids, rout, vea (early voltage) & gm/gd gain and device linearity metrics-vip2 & vip3 and intermodulation distortion-imd3 of the said device have been studied facilitating the selection of bias point for improved RF/analog performance.
Keywords :
MOSFET; intermodulation distortion; semiconductor device measurement; ISE MOSFET; RF/analog performance; analog performance metrics; gate stack configuration; insulated shallow extension; intermodulation distortion; signal linear characteristics; DH-HEMTs; Dielectric devices; Intermodulation distortion; Laboratories; Linearity; MOSFET circuits; Microwave devices; Radio frequency; Roads; Semiconductor devices; Device Simulation; Dielectric pocket; Gate stack; ISE;
Conference_Titel :
Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on
Conference_Location :
Jaipur
Print_ISBN :
978-1-4244-2690-4
Electronic_ISBN :
978-1-4244-2691-1
DOI :
10.1109/AMTA.2008.4762992
