Title :
Exploring the effect on negative junction depth on electrical behaviour of sub-50nm GME-TRC MOSFET: A simulation study
Author :
Malik, Pravanjan ; Chaujar, Rishu ; Gupta, Madhu ; Gupta, R.S.
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, New Delhi
Abstract :
In this paper, we propose a novel MOSFET design: Gate Material Engineered-Trapezoidal Recessed Channel (GME-TRC) MOSFET and investigate the effect of the negative junction depth (NJD) for different source drain(S/D) extension on the electrical behaviour of proposed structure. The results are compared with conventional Trapezoidal Recessed Channel (TRC) MOSFET using device simulators-DEVEDIT 3-D and ATLAS 3-D. Simulation results reveal that TRC MOSFET with GME architecture enhances device reliability and performance in terms of reduced electric field near the drain end, threshold voltage roll-off, improved gate control and driving current capabilities.
Keywords :
MOSFET; VLSI; circuit reliability; ATLAS 3-D; GME-TRC MOSFET; VLSI technology; device reliability; device simulators-DEVEDIT 3-D; driving current; gate control; gate material engineered-trapezoidal recessed channel MOSFET; negative junction depth; source drain; threshold voltage roll-off; Analytical models; Circuit simulation; Design engineering; Doping; Laboratories; MOSFET circuits; Microwave devices; Threshold voltage; Transconductance; Voltage control; ATLAS-3D; Corner effect; DEVEDIT-3D; GME; NJD; TRC MOSFET;
Conference_Titel :
Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on
Conference_Location :
Jaipur
Print_ISBN :
978-1-4244-2690-4
Electronic_ISBN :
978-1-4244-2691-1
DOI :
10.1109/AMTA.2008.4762993
