An ultra-low voltage Pseudo-Floating Gate Amplifier

Author

Azadmehr, Mehdi ; Berg, Yngvar

Author_Institution

Inst. of Technol., Vestfold Univ. Coll., Horten, Norway

fYear

2012

fDate

6-8 June 2012

Firstpage

1

Lastpage

4

Abstract

In this paper we present an Ultra-Low Voltage Pseudo Floating-Gate Amplifier (ULVPFGA). The amplifier has high gain and high linearity for supply voltages down to 300mV. The amplifier is based on Pseudo Floating-Gate and in addition to gain, it offers frequency band adjustment. Both the low- and high-frequency cutoffs are controlled electronically using bias voltages through their bulk. The ULVPFGA enjoys low component spread and compactness, containing only small size transistors and capacitors suited for integration. We also show a second order section realized using the ULVPFGA. The simulations presented in this paper are valid for the 90nm CMOS transistor models from STM having a V DD equal to 1.2V and threshold voltage of 250mV.

Keywords

CMOS integrated circuits; amplifiers; capacitors; low-power electronics; CMOS transistor model; ULVPFGA; bias voltage; capacitor; high-frequency cutoffs; low-frequency cutoffs; second order section; size 90 nm; ultra-low voltage pseudo-floating gate amplifier; voltage 1.2 V; voltage 250 mV; voltage 300 mV; CMOS integrated circuits; Capacitors; Inverters; Linearity; Logic gates; Transistors; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Faible Tension Faible Consommation (FTFC), 2012 IEEE

Conference_Location

Paris

Print_ISBN

978-1-4673-0822-9

Type

conf

DOI

10.1109/FTFC.2012.6231740

Filename

6231740