Title :
The evaluation of rear incident proton irradiation on GaAs
Author :
Hokuyo, S. ; Matsumoto, H. ; Oda, T. ; Yoshida, S. ; Matsuda, S.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
Proton radiation effects on AlGaAs/GaAs solar cells through the rear surface are described. Because the AlGaAs/GaAs solar cell has an active region of several microns thickness, the GaAs substrate works as shielding for proton radiation through the rear surface. The shallow active region close to the surface is due to the large light absorption coefficient and short diffusion length of gallium arsenide. The results of the rear-incident proton radiation tests confirm the shielding effect of the gallium arsenide substrate.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; proton effects; solar cells; AlGaAs-GaAs solar cells; diffusion length; light absorption coefficient; rear incident proton irradiation; shallow active region; shielding; Absorption; Gallium arsenide; Performance evaluation; Photovoltaic cells; Proton radiation effects; Radiation effects; Satellites; Substrates; Testing; Zinc;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105851
