DocumentCode :
2509758
Title :
The effect of different module configurations on the radiation tolerance multijunction solar cells
Author :
Gee, James M. ; Curtis, Henry B.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
fYear :
1988
fDate :
1988
Firstpage :
996
Abstract :
The effects of different module configurations on the performances of multijunctioning (MJ) solar cells in a radiation environment were investigated. Module configuration refers to the electrical circuit in which the subcells of the multijunction cell are wired. Experimental data for AlGaAs, GaAs, InGaAs, and silicon single-junction concentrator cells subjected to 1 MeV electron irradiation were used to calculate the expected performance of AlGaAs/InGaAs, AlGaAs/silicon, GaAs/InGaAs, and GaAs/silicon MJ concentrator cells. These calculations include independent, series, and voltage-matched configurations. The module configuration is found to have a significant impact on the radiation tolerance characteristics of MJ cells.
Keywords :
radiation effects; solar cells; AlGaAs solar cells; GaAs solar cells; InGaAs solar cells; Si solar cells; independent configurations; module configurations; multijunction solar cells; radiation tolerance characteristics; series configurations; voltage-matched configurations; Circuits; Degradation; Electrons; Gallium arsenide; Indium gallium arsenide; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Silicon; Virtual manufacturing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
Type :
conf
DOI :
10.1109/PVSC.1988.105854
Filename :
105854
Link To Document :
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