DocumentCode
2509874
Title
Status of LIPS-II GaAs after five years in orbit
Author
Scorfield, J.D.
Author_Institution
Air Force Wright Aeronaut. Lab., Wright-Patterson AFB, OH, USA
fYear
1988
fDate
1988
Firstpage
1024
Abstract
Updated and reduced data through day 1995 as well as conclusions about the performance and behavior of the GaAs panel are presented. The performance of the GaAs panel, after initial severe degradation, is encouraging. The results support other data indicating that GaAs solar cells are a viable space power system component. Taking into account recent advances such as Ge substrate use, multibandgap efforts, and significant performance gains, the author concludes that GaAs cells are ready to become the next generation of photovoltaic cells supplying space power for military and commercial missions.
Keywords
III-V semiconductors; gallium arsenide; solar cells; space vehicle power plants; GaAs solar cells; LIPS-II; degradation; living plume shield II satellite; semiconductor; space vehicles; Character generation; Degradation; Force measurement; Gallium arsenide; Industrial power systems; Military satellites; Performance gain; Photovoltaic cells; Photovoltaic systems; Power supplies; Power system simulation; Space missions; Sun; Telemetry; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location
Las Vegas, NV, USA
Type
conf
DOI
10.1109/PVSC.1988.105859
Filename
105859
Link To Document