DocumentCode :
2509874
Title :
Status of LIPS-II GaAs after five years in orbit
Author :
Scorfield, J.D.
Author_Institution :
Air Force Wright Aeronaut. Lab., Wright-Patterson AFB, OH, USA
fYear :
1988
fDate :
1988
Firstpage :
1024
Abstract :
Updated and reduced data through day 1995 as well as conclusions about the performance and behavior of the GaAs panel are presented. The performance of the GaAs panel, after initial severe degradation, is encouraging. The results support other data indicating that GaAs solar cells are a viable space power system component. Taking into account recent advances such as Ge substrate use, multibandgap efforts, and significant performance gains, the author concludes that GaAs cells are ready to become the next generation of photovoltaic cells supplying space power for military and commercial missions.
Keywords :
III-V semiconductors; gallium arsenide; solar cells; space vehicle power plants; GaAs solar cells; LIPS-II; degradation; living plume shield II satellite; semiconductor; space vehicles; Character generation; Degradation; Force measurement; Gallium arsenide; Industrial power systems; Military satellites; Performance gain; Photovoltaic cells; Photovoltaic systems; Power supplies; Power system simulation; Space missions; Sun; Telemetry; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
Type :
conf
DOI :
10.1109/PVSC.1988.105859
Filename :
105859
Link To Document :
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