Numerical modelling of AlGaAs/GaAs and InGaP/GaAs single and double HBTs

Author

Sotoodeh, M. ; Khalid, A.H. ; Rezazadeh, A.A.

Author_Institution

Dept. of Electron. Eng., King´´s Coll., London, UK

fYear

1997

fDate

24-25 Nov 1997

Firstpage

223

Lastpage

228

Abstract

The dc characteristics of a graded AlGaAs/GaAs single HBT (SHBT) and an abrupt InGaP/GaAs double HBT (DHBT) are studied using a thermionic-field emission boundary condition model. The model incorporates tunnelling and thermionic emission into a one-dimensional drift-diffusion numerical scheme and accounts for carrier degeneracy and bandgap narrowing. To our best knowledge, this is the first ever reported numerical analysis of InGaP/GaAs HBTs. A variety of existing data from different sources is analysed to find the best theoretical/empirical relations for the bandgap and transport related parameters of In_1-xGa_xP. The room temperature calculated Gummel plots and common-emitter output characteristics are compared to the experimentally measured ones and a good fit is observed between the two results. Finally, the simulated variation of current gain with temperature in various devices will be demonstrated

Keywords

III-V semiconductors; aluminium compounds; energy gap; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device models; thermionic electron emission; tunnelling; AlGaAs-GaAs; DC characteristics; Gummel plot; InGaP-GaAs; abrupt InGaP/GaAs double HBT; bandgap narrowing; carrier degeneracy; common-emitter output characteristics; current gain; graded AlGaAs/GaAs single HBT; one-dimensional drift-diffusion numerical model; thermionic emission; thermionic-field emission boundary condition model; transport parameters; tunnelling; Boundary conditions; Gallium arsenide; Heterojunction bipolar transistors; Numerical models; Photonic band gap; Radiative recombination; Semiconductor process modeling; Temperature dependence; Thermionic emission; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on

Conference_Location

London

Print_ISBN

0-7803-4135-X

Type

conf

DOI

10.1109/EDMO.1997.668603

Filename

668603