Title :
Numerical modelling of AlGaAs/GaAs and InGaP/GaAs single and double HBTs
Author :
Sotoodeh, M. ; Khalid, A.H. ; Rezazadeh, A.A.
Author_Institution :
Dept. of Electron. Eng., King´´s Coll., London, UK
Abstract :
The dc characteristics of a graded AlGaAs/GaAs single HBT (SHBT) and an abrupt InGaP/GaAs double HBT (DHBT) are studied using a thermionic-field emission boundary condition model. The model incorporates tunnelling and thermionic emission into a one-dimensional drift-diffusion numerical scheme and accounts for carrier degeneracy and bandgap narrowing. To our best knowledge, this is the first ever reported numerical analysis of InGaP/GaAs HBTs. A variety of existing data from different sources is analysed to find the best theoretical/empirical relations for the bandgap and transport related parameters of In1-xGaxP. The room temperature calculated Gummel plots and common-emitter output characteristics are compared to the experimentally measured ones and a good fit is observed between the two results. Finally, the simulated variation of current gain with temperature in various devices will be demonstrated
Keywords :
III-V semiconductors; aluminium compounds; energy gap; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device models; thermionic electron emission; tunnelling; AlGaAs-GaAs; DC characteristics; Gummel plot; InGaP-GaAs; abrupt InGaP/GaAs double HBT; bandgap narrowing; carrier degeneracy; common-emitter output characteristics; current gain; graded AlGaAs/GaAs single HBT; one-dimensional drift-diffusion numerical model; thermionic emission; thermionic-field emission boundary condition model; transport parameters; tunnelling; Boundary conditions; Gallium arsenide; Heterojunction bipolar transistors; Numerical models; Photonic band gap; Radiative recombination; Semiconductor process modeling; Temperature dependence; Thermionic emission; Tunneling;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
DOI :
10.1109/EDMO.1997.668603
