Title :
Optical effect on the buried gate MESFET with time dependent characteristics
Author :
Jaya, T. ; Kannan, V.
Author_Institution :
Sathyabama Univ., Chennai, India
Abstract :
Time - dependent characteristic of buried-gate GaAs MESFET with front illumination have been analyzed by solving continuity equation. This analysis includes the ion implanted buried-gate process. At time `t´ is equal to zero, the light through the optical fiber is turning `ON´ and `OFF´ has been considered. The channel charge and channel current have been evaluated and discussed. Buried-gate optical field effect transistor (OPFET) will be highly suitable for optical communication and optical computing.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; optical fibres; GaAs; buried gate MESFET; buried-gate optical field effect transistor; channel charge; channel current; continuity equation; front illumination; ion implanted buried-gate process; optical communication; optical computing; optical fiber; time dependent characteristics; Gallium arsenide; Lighting; Logic gates; MESFETs; Optical fibers; Metal Field Effect Transistor (MESFET); component; optical field effect transistor (OPFET);
Conference_Titel :
Recent Advances in Space Technology Services and Climate Change (RSTSCC), 2010
Conference_Location :
Chennai
Print_ISBN :
978-1-4244-9184-1
DOI :
10.1109/RSTSCC.2010.5712824
