Title :
A 0.15 – 4.98 GHz traveling-wave amplifier using packaged MESFET
Author :
Wilson, M. ; Sun, C.
Author_Institution :
Dept. of Electr. Eng., California Polytech. State Univ. at San Luis Obispo, San Luis Obispo, CA
Abstract :
This paper describes a single stage distributed amplifier with 10 dB gain in the 0.15 - 4.98 GHz frequency range. The amplifier uses four packaged GaAs MESFETS and was constructed on a microstrip, 4X2 inch circuit.
Keywords :
III-V semiconductors; MESFET integrated circuits; gallium arsenide; microwave amplifiers; travelling wave amplifiers; GaAs; frequency 0.15 GHz to 4.98 GHz; microstrip; noise figure 10 dB; packaged MESFET; single stage distributed amplifier; traveling-wave amplifier; Broadband amplifiers; Capacitance; Circuits; Cutoff frequency; Distributed amplifiers; Gain; MESFETs; Microstrip; Packaging; Power transmission lines; Packaged GsAs MESFET; Traveling-wave amplifier;
Conference_Titel :
Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on
Conference_Location :
Jaipur
Print_ISBN :
978-1-4244-2690-4
Electronic_ISBN :
978-1-4244-2691-1
DOI :
10.1109/AMTA.2008.4763011
