DocumentCode :
2510214
Title :
Ku band properties of Bi2O3 thin film: Effect of oxidation temperature
Author :
Patil, Shital ; Jadhav, Rupali ; Puri, Vijaya
Author_Institution :
Dept. of Phys., Shivaji Univ., Kolhapur
fYear :
2008
fDate :
21-24 Nov. 2008
Firstpage :
163
Lastpage :
165
Abstract :
This paper reports, the Ku band microwave permittivity, absorption and impedance of the bismuth oxide thin films deposited on alumina. Frequency dependant and oxidation temperature dependant effects are observed. The impedance is inductive in nature.
Keywords :
bismuth compounds; dielectric thin films; electric impedance; electromagnetic wave absorption; microwave materials; oxidation; permittivity; Bi2O3; Ku band microwave permittivity; impedance; microwave absorption; oxidation; thin films; Bismuth; Dielectric constant; Dielectric losses; Dielectric thin films; Electromagnetic wave absorption; Impedance; Oxidation; Permittivity; Sputtering; Temperature; Absorption; Bismuth oxide; Impedance; Microwave permittivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on
Conference_Location :
Jaipur
Print_ISBN :
978-1-4244-2690-4
Electronic_ISBN :
978-1-4244-2691-1
Type :
conf
DOI :
10.1109/AMTA.2008.4763020
Filename :
4763020
Link To Document :
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