DocumentCode
2510214
Title
Ku band properties of Bi2 O3 thin film: Effect of oxidation temperature
Author
Patil, Shital ; Jadhav, Rupali ; Puri, Vijaya
Author_Institution
Dept. of Phys., Shivaji Univ., Kolhapur
fYear
2008
fDate
21-24 Nov. 2008
Firstpage
163
Lastpage
165
Abstract
This paper reports, the Ku band microwave permittivity, absorption and impedance of the bismuth oxide thin films deposited on alumina. Frequency dependant and oxidation temperature dependant effects are observed. The impedance is inductive in nature.
Keywords
bismuth compounds; dielectric thin films; electric impedance; electromagnetic wave absorption; microwave materials; oxidation; permittivity; Bi2O3; Ku band microwave permittivity; impedance; microwave absorption; oxidation; thin films; Bismuth; Dielectric constant; Dielectric losses; Dielectric thin films; Electromagnetic wave absorption; Impedance; Oxidation; Permittivity; Sputtering; Temperature; Absorption; Bismuth oxide; Impedance; Microwave permittivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on
Conference_Location
Jaipur
Print_ISBN
978-1-4244-2690-4
Electronic_ISBN
978-1-4244-2691-1
Type
conf
DOI
10.1109/AMTA.2008.4763020
Filename
4763020
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