DocumentCode
2510267
Title
Unipolar characteristics of Carbon Nanotube Field Effect Transistor
Author
Sridevi, V. ; Jayanthy, T.
Author_Institution
Sathyabama Univ., Chennai, India
fYear
2010
fDate
13-15 Nov. 2010
Firstpage
223
Lastpage
228
Abstract
Carbon Nano Tube (CNT) is one of the several cutting edge emerging technologies within Nano technology, that is showing high efficiency and very wide range of applications in many different streams of science and technology. The Carbon Nano Tube Field Effect Transistors (CNTFETs) have been explored and proposed to be the promising candidate for the next generation of integrated circuit (IC) devices. To explore the role of CNTFETs in future integrated circuits, it is important to evaluate their performance. However, to do that we need a model that can accurately describe the behavior of the CNTFETs so that the design and evaluation of circuits using these devices can be made. This paper focuses on compact modeling of CNTFET and analysis of the performance of the developed model using various characteristics.
Keywords
carbon nanotubes; field effect transistors; nanoelectronics; semiconductor device models; C; CNT; CNTFET modelling; IC devices; carbon nanotube field effect transistor; integrated circuit devices; nanotechnology; CNTFETs; Capacitance; Dielectrics; Electron tubes; Integrated circuit modeling; Logic gates; Mathematical model; CNT Field Effect Transistor (CNTFET; Carbon Nanotube (CNT); Compact modeling; Density of State; Schottky Barrier;
fLanguage
English
Publisher
ieee
Conference_Titel
Recent Advances in Space Technology Services and Climate Change (RSTSCC), 2010
Conference_Location
Chennai
Print_ISBN
978-1-4244-9184-1
Type
conf
DOI
10.1109/RSTSCC.2010.5712839
Filename
5712839
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