• DocumentCode
    2510267
  • Title

    Unipolar characteristics of Carbon Nanotube Field Effect Transistor

  • Author

    Sridevi, V. ; Jayanthy, T.

  • Author_Institution
    Sathyabama Univ., Chennai, India
  • fYear
    2010
  • fDate
    13-15 Nov. 2010
  • Firstpage
    223
  • Lastpage
    228
  • Abstract
    Carbon Nano Tube (CNT) is one of the several cutting edge emerging technologies within Nano technology, that is showing high efficiency and very wide range of applications in many different streams of science and technology. The Carbon Nano Tube Field Effect Transistors (CNTFETs) have been explored and proposed to be the promising candidate for the next generation of integrated circuit (IC) devices. To explore the role of CNTFETs in future integrated circuits, it is important to evaluate their performance. However, to do that we need a model that can accurately describe the behavior of the CNTFETs so that the design and evaluation of circuits using these devices can be made. This paper focuses on compact modeling of CNTFET and analysis of the performance of the developed model using various characteristics.
  • Keywords
    carbon nanotubes; field effect transistors; nanoelectronics; semiconductor device models; C; CNT; CNTFET modelling; IC devices; carbon nanotube field effect transistor; integrated circuit devices; nanotechnology; CNTFETs; Capacitance; Dielectrics; Electron tubes; Integrated circuit modeling; Logic gates; Mathematical model; CNT Field Effect Transistor (CNTFET; Carbon Nanotube (CNT); Compact modeling; Density of State; Schottky Barrier;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Recent Advances in Space Technology Services and Climate Change (RSTSCC), 2010
  • Conference_Location
    Chennai
  • Print_ISBN
    978-1-4244-9184-1
  • Type

    conf

  • DOI
    10.1109/RSTSCC.2010.5712839
  • Filename
    5712839