DocumentCode :
2510267
Title :
Unipolar characteristics of Carbon Nanotube Field Effect Transistor
Author :
Sridevi, V. ; Jayanthy, T.
Author_Institution :
Sathyabama Univ., Chennai, India
fYear :
2010
fDate :
13-15 Nov. 2010
Firstpage :
223
Lastpage :
228
Abstract :
Carbon Nano Tube (CNT) is one of the several cutting edge emerging technologies within Nano technology, that is showing high efficiency and very wide range of applications in many different streams of science and technology. The Carbon Nano Tube Field Effect Transistors (CNTFETs) have been explored and proposed to be the promising candidate for the next generation of integrated circuit (IC) devices. To explore the role of CNTFETs in future integrated circuits, it is important to evaluate their performance. However, to do that we need a model that can accurately describe the behavior of the CNTFETs so that the design and evaluation of circuits using these devices can be made. This paper focuses on compact modeling of CNTFET and analysis of the performance of the developed model using various characteristics.
Keywords :
carbon nanotubes; field effect transistors; nanoelectronics; semiconductor device models; C; CNT; CNTFET modelling; IC devices; carbon nanotube field effect transistor; integrated circuit devices; nanotechnology; CNTFETs; Capacitance; Dielectrics; Electron tubes; Integrated circuit modeling; Logic gates; Mathematical model; CNT Field Effect Transistor (CNTFET; Carbon Nanotube (CNT); Compact modeling; Density of State; Schottky Barrier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Recent Advances in Space Technology Services and Climate Change (RSTSCC), 2010
Conference_Location :
Chennai
Print_ISBN :
978-1-4244-9184-1
Type :
conf
DOI :
10.1109/RSTSCC.2010.5712839
Filename :
5712839
Link To Document :
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