Title :
Plasmon resonances and rectifying of terahertz radiation in GaN and InGaAs-based field-effect transistors
Author :
Wang, Lin ; Hu, Weida ; Chen, Xiaoshuang
Author_Institution :
Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China
Abstract :
The plasmon resonances in GaN and InGaAs-based heterojunction field effect transistors (FETs) are investigated by using the finite-difference method in combination with finite-element solution of electron densities, potential and carrier velocities. Our results predict a resonant behavior of photoresponse in the channel of these FETs at terahertz frequencies indicating potential application of these devices in THz field. In addition, the dynamic of plasma waves in the channel is investigated in detail.
Keywords :
III-V semiconductors; electron density; finite difference methods; finite element analysis; gallium arsenide; heterojunction bipolar transistors; indium compounds; plasma waves; plasmons; wide band gap semiconductors; FET; GaN; InGaAs; carrier velocity; electron density; finite-difference method; finite-element solution; heterojunction field effect transistors; photoresponse resonant behavior; plasma wave dynamic; plasmon resonances; terahertz radiation rectifying; Gallium nitride; HEMTs; MODFETs; Plasma waves; Plasmons; Resonant frequency;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
DOI :
10.1109/IRMMW-THz.2012.6380265
