Title :
RF performance investigation of DMG AlGaN/GaN high electron mobility transistor
Author :
Kumar, S.P. ; Agrawal, Ankit ; Chaujar, R. ; Gupta, M. ; Gupta, R.S.
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, Delhi
Abstract :
In this paper, the RF performance of dual material gate (DMG) AlGaN/GaN HEMT is investigated using ATLAS device simulator and presented as a high performance RF solution to microwave applications. Simulations result reveal improved RF characteristics of DMG AlGaN/GaN HEMT in comparison to Single Material Gate (SMG) AlGaN/GaN HEMT in terms of higher cut-off frequency, current gain and reduced parasitic capacitances strengthening the idea of using it for HF wireless and RF applications.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; ATLAS device simulator; AlGaN-GaN; DMG; HF wireless; RF applications; RF performance; current gain; dual material gate; high electron mobility transistor; higher cut-off frequency; microwave applications; parasitic capacitances; single material gate; Aluminum gallium nitride; Cutoff frequency; Electrons; Gallium nitride; HEMTs; MODFETs; Microwave devices; Performance gain; Radio frequency; Transconductance; ATLAS; AlGaN/GaN HEMT; Cut-off Frequency; DMG; RF;
Conference_Titel :
Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on
Conference_Location :
Jaipur
Print_ISBN :
978-1-4244-2690-4
Electronic_ISBN :
978-1-4244-2691-1
DOI :
10.1109/AMTA.2008.4763039
