Title :
Formation of the Si-Schottky junctions by simple electrochemical process and verification of their characteristics by TCAD
Author_Institution :
Dept. of ECE, Asansol Eng. Coll., Asansol
Abstract :
A very simple electrochemical process is used to deposit platinum (Pt) and nickel (Ni) on silicon (Si) substrate to form Schottky junction. The electrical behaviors of these Schottky junctions are observed. We also used TCAD (SILVACO 3.2) to fabricate these Schottky junctions and to observe the electrical behavior of these devices, and it shows that experimental and simulated results are close.
Keywords :
Schottky barriers; electrochemical analysis; elemental semiconductors; metallic thin films; nickel; platinum; silicon; technology CAD (electronics); Ni; Pt; SILVACO 3.2; Si; Si-Schottky junction formation; TCAD; electrochemical process; nickel; platinum; silicon substrate; Chemical analysis; Crystallization; Electrochemical processes; Electrodes; Nickel; Semiconductor thin films; Silicon; Sputtering; Substrates; Water heating;
Conference_Titel :
Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on
Conference_Location :
Jaipur
Print_ISBN :
978-1-4244-2690-4
Electronic_ISBN :
978-1-4244-2691-1
DOI :
10.1109/AMTA.2008.4763041
