Title :
A tuned wideband LNA in 0.25 μm IBM process for RF communication applications
Author :
Benmansour, M. ; Mukund, P.R.
Author_Institution :
Dept. of Electr. Eng., Rochester Inst. of Technol., NY, USA
Abstract :
This paper discusses the design of a low noise amplifier tunable over a wide range of frequencies. The LNA is designed for a frequency band 1.4 GHz-2 GHz and provides an output return loss, S22, less than -24 dB, an input return loss, S11, less than -10 dB, a gain of 11.5 dB and noise figure between 1.8-3.4 dB. The LNA has been implemented in 0.25 μm CMOS IBM process, with a 2.5V power supply.
Keywords :
CMOS integrated circuits; noise; radiocommunication; radiofrequency amplifiers; wideband amplifiers; 0.25 micron; 1.4 to 2 GHz; 1.8 to 3.4 dB; 2.5 V; CMOS IBM process; LNA design; RF communication; complementary metal oxide semiconductor; low noise amplifiers; radiofrequency communication; tuned wideband LNA; Broadband amplifiers; Capacitance; Energy consumption; Impedance; Low-noise amplifiers; Narrowband; Noise figure; Radio frequency; Radiofrequency amplifiers; Wideband;
Conference_Titel :
VLSI Design, 2004. Proceedings. 17th International Conference on
Print_ISBN :
0-7695-2072-3
DOI :
10.1109/ICVD.2004.1260990
