Thermal model for AlGaN/GaN HEMTs including self-heating effect and non-linear polarization

Author

Chattopadhyay, Manju K.

Author_Institution

Sch. of Electron., Devi Ahilya Univ., Indore

fYear

2008

fDate

21-24 Nov. 2008

Firstpage

63

Lastpage

65

Abstract

A unified thermal model based on polynomial relationship of n_s and E_F is presented for AlGaN/GaN high electron mobility transistors (HEMTs). Self heating and polarization effects are included in the calculations of I_d-V_d characteristics. The model is based on closed form expressions and does not require elaborate computation. our results agree with published experimental data.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; HEMT; high electron mobility transistors; nonlinear polarization; self-heating effect; thermal model; Aluminum gallium nitride; Analytical models; Gallium nitride; HEMTs; Heterojunctions; III-V semiconductor materials; MODFETs; Piezoelectric polarization; Polynomials; Temperature; 2-DEG; Device model; Gallium Nitride; HEMT; non-linear polarization; self-hearing;

fLanguage

English

Publisher

ieee

Conference_Titel

Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on

Conference_Location

Jaipur

Print_ISBN

978-1-4244-2690-4

Electronic_ISBN

978-1-4244-2691-1

Type

conf

DOI

10.1109/AMTA.2008.4763043

Filename

4763043