Title :
Thermal model for AlGaN/GaN HEMTs including self-heating effect and non-linear polarization
Author :
Chattopadhyay, Manju K.
Author_Institution :
Sch. of Electron., Devi Ahilya Univ., Indore
Abstract :
A unified thermal model based on polynomial relationship of ns and EF is presented for AlGaN/GaN high electron mobility transistors (HEMTs). Self heating and polarization effects are included in the calculations of Id-Vd characteristics. The model is based on closed form expressions and does not require elaborate computation. our results agree with published experimental data.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; HEMT; high electron mobility transistors; nonlinear polarization; self-heating effect; thermal model; Aluminum gallium nitride; Analytical models; Gallium nitride; HEMTs; Heterojunctions; III-V semiconductor materials; MODFETs; Piezoelectric polarization; Polynomials; Temperature; 2-DEG; Device model; Gallium Nitride; HEMT; non-linear polarization; self-hearing;
Conference_Titel :
Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on
Conference_Location :
Jaipur
Print_ISBN :
978-1-4244-2690-4
Electronic_ISBN :
978-1-4244-2691-1
DOI :
10.1109/AMTA.2008.4763043
