DocumentCode
2510718
Title
CMOS and BiCMOS VCO — Status and trends
Author
Li, Xiang ; Feng, Guang-Yin ; Cai, Jing-ye ; Shao, Zhen-Hai ; Liu, Lianfu ; Zhu, Xueyong
Author_Institution
Sch. of Commun. & Inf. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear
2011
fDate
21-23 Oct. 2011
Firstpage
123
Lastpage
127
Abstract
This paper gives a brief overview of voltage controlled oscillator(VCO) based on Si CMOS and SiGeBiCMOS process technologies. The status of designing techniques for high performance VCO is summarized because of its importance for high-speed communication systems and radar sensors. Then, the development tendency of VCO is introduced.
Keywords
BiCMOS analogue integrated circuits; CMOS analogue integrated circuits; Ge-Si alloys; sensors; voltage-controlled oscillators; BiCMOS process technologies; SiGe; VCO; high-speed communication systems; radar sensors; voltage controlled oscillator; CMOS integrated circuits; Inductors; Microwave circuits; Phase noise; Voltage-controlled oscillators; Si CMOS; SiGe BiCMOS; voltage controlled oscillator(VCO);
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Problem-Solving (ICCP), 2011 International Conference on
Conference_Location
Chengdu
Print_ISBN
978-1-4577-0602-8
Electronic_ISBN
978-1-4577-0601-1
Type
conf
DOI
10.1109/ICCPS.2011.6092219
Filename
6092219
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