Title :
CMOS and BiCMOS VCO — Status and trends
Author :
Li, Xiang ; Feng, Guang-Yin ; Cai, Jing-ye ; Shao, Zhen-Hai ; Liu, Lianfu ; Zhu, Xueyong
Author_Institution :
Sch. of Commun. & Inf. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
This paper gives a brief overview of voltage controlled oscillator(VCO) based on Si CMOS and SiGeBiCMOS process technologies. The status of designing techniques for high performance VCO is summarized because of its importance for high-speed communication systems and radar sensors. Then, the development tendency of VCO is introduced.
Keywords :
BiCMOS analogue integrated circuits; CMOS analogue integrated circuits; Ge-Si alloys; sensors; voltage-controlled oscillators; BiCMOS process technologies; SiGe; VCO; high-speed communication systems; radar sensors; voltage controlled oscillator; CMOS integrated circuits; Inductors; Microwave circuits; Phase noise; Voltage-controlled oscillators; Si CMOS; SiGe BiCMOS; voltage controlled oscillator(VCO);
Conference_Titel :
Computational Problem-Solving (ICCP), 2011 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4577-0602-8
Electronic_ISBN :
978-1-4577-0601-1
DOI :
10.1109/ICCPS.2011.6092219
