Critical comparison of carrier lifetime at 1.55 µm of ion-irradiated InGaAs, cold-implanted InGaAsP, and ErAs:GaAs

Author

Martin, M. ; Brown, E.R. ; Mangeney, J. ; Fekecs, A. ; Arès, R. ; Morris, D.

Author_Institution

Dept. of Phys., Wright State Univ., Dayton, OH, USA

fYear

2012

fDate

23-28 Sept. 2012

Firstpage

1

Lastpage

2

Abstract

We compare the photocarrier lifetime measured in Br-irradiated InGaAs and cold Fe-implanted InGaAsP. We also demonstrate the possibility of a two-photon absorption (TPA) process in ErAs:GaAs. The lifetime and the TPA were measured with a fiber-based 1550 nm time-resolved differential transmission (ΔT) set-up. The InGaAs-based materials show a positive ΔT with sub-picosecond lifetime, whereas ErAs:GaAs shows a negative ΔT consistent with a two-photon absorption process.

Keywords

III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; ion beam effects; iron; time resolved spectra; two-photon processes; ErAs:GaAs; InGaAs; InGaAsP:Fe; ion-irradiation; photocarrier lifetime; time-resolved differential transmission set-up; two-photon absorption process; wavelength 1.55 mum; Absorption; Gallium arsenide; Indium gallium arsenide; Optical fiber couplers; Optical fiber devices; Probes;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on

Conference_Location

Wollongong, NSW

ISSN

2162-2027

Print_ISBN

978-1-4673-1598-2

Electronic_ISBN

2162-2027

Type

conf

DOI

10.1109/IRMMW-THz.2012.6380277

Filename

6380277