Title :
Optical response of Quantum Dot Transistor with front side illumination
Author :
Vijayakumar, Viji ; Seshasayanan, R.
Author_Institution :
Sathyabama Univ., Chennai, India
Abstract :
The theoretical work for the DC performance of Quantum Dot Transistor under Front side illumination is presented. A device structure consist of Quantum Dots in the GaAs layer is considered for illumination. The photoconductive effect in the GaAs and QD layer which increases the 2DEG Channel electron concentration is considered. The I-V Characteristics of Quantum Dot Transistor, under dark and illumination condition have been evaluated, plotted and discussed.
Keywords :
III-V semiconductors; gallium arsenide; photoconductivity; semiconductor quantum dots; transistors; 2DEG channel electron concentration; GaAs; I-V characteristics; QD layer; device structure; front side illumination; optical response; photoconductive effect; quantum dot transistor; Gallium arsenide; Lighting; Logic gates; Optical saturation; Photonics; Quantum dots; Transistors; 2DEG; DC illumination; Photoconductive effect; Quantum Dot Transistor(QDT);
Conference_Titel :
Recent Advances in Space Technology Services and Climate Change (RSTSCC), 2010
Conference_Location :
Chennai
Print_ISBN :
978-1-4244-9184-1
DOI :
10.1109/RSTSCC.2010.5712862
