• DocumentCode
    2510832
  • Title

    High frequency performance of GaAsSb/InAlAs/InGaAs tunnel diodes at 220 GHz

  • Author

    Patrashin, M. ; Sekine, N. ; Kasamatsu, A. ; Watanabe, I. ; Hosako, I. ; Takahashi, T. ; Sato, M. ; Nakasha, Y. ; Hara, N.

  • Author_Institution
    Nat. Inst. of Inf. & Commun. Technol., Koganei, Japan
  • fYear
    2012
  • fDate
    23-28 Sept. 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We evaluated performance of zero-bias, square-law GaAsSb/InAlAs/InGaAs tunnel diodes at frequencies up to 220 GHz. The detectors with submicron cross-sectional area demonstrated sensitivities above 500 V/W, and curvature coefficients of 20 V-1.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; millimetre wave diodes; tunnel diodes; GaAsSb-InAlAs-InGaAs; curvature coefficients; frequency 220 GHz; square-law tunnel diodes; submicron cross-sectional area; zero-bias; Current measurement; Detectors; Indium gallium arsenide; Semiconductor diodes; Sensitivity; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
  • Conference_Location
    Wollongong, NSW
  • ISSN
    2162-2027
  • Print_ISBN
    978-1-4673-1598-2
  • Electronic_ISBN
    2162-2027
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2012.6380282
  • Filename
    6380282
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2510832