An effective design of two stage low noise amplifier for WiMAX

Author

Deosarkar, S.B. ; Punitha, L. ; Ratnaparkhi, V.

Author_Institution

Dept. of Electron. & Telecomm., Dr.B.A.T.U., Lonere

fYear

2008

fDate

21-24 Nov. 2008

Firstpage

522

Lastpage

524

Abstract

An efficient two-stage low noise amplifier (LNA) is designed around 3.5 GHz spectrum of WiMAX. The first stage of LNA is designed using pseudomorphic high electron-mobility transistor (pHEMT).The pHEMT GaAs FET is conditionally stable within the desired frequency range of 3.3 GHz to 3.5 GHz. The simulated results were obtained at 3.4 GHz for gain of 24.3 dB, noise figure (NF) 1.13 dB, input return loss (S₁₁) greater than 28 dB and output return loss (S₂₂) nearly 29 dB. The LNA is fabricated by using RT-duroid substrate with epsiv_r=2.55 and the designed results were well matched with the simulated results.

Keywords

WiMax; high electron mobility transistors; low noise amplifiers; microwave amplifiers; network synthesis; FET; WiMAX; field effect transistor; frequency 3.3 GHz to 3.5 GHz; low noise amplifier; pHEMT; pseudomorphic high electron-mobility transistor; two stage LNA design; Feedback; Frequency; Impedance; Low-noise amplifiers; Microwave amplifiers; Microwave transistors; Reflection; Scattering parameters; Stability; WiMAX; Conditional stability; LNA; NF; RTduroid; WiMAX;

fLanguage

English

Publisher

ieee

Conference_Titel

Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on

Conference_Location

Jaipur

Print_ISBN

978-1-4244-2690-4

Electronic_ISBN

978-1-4244-2691-1

Type

conf

DOI

10.1109/AMTA.2008.4763054

Filename

4763054