Three dimensional quantum effects in NanoMOSFETs

In this paper, a three dimensional numerical model of a uniformly doped nanoscale MOSFET device considering the quantum-mechanical effects has been presented. The 3D Poissonpsilas equation in the space charge region coupled with 3D Schrodinger equation has been solved numerically using Leibmannpsilas iteration method. The exact potential profile and electric field profile were estimated from the set of physics based equations to examine the mobility of carriers at various points in the device. The potential profile thus obtained including Quantum Mechanical Effects, forms the basis for estimating other characteristics of the nanoMOSFET. This 3D model will provide the insights into the performance of low dimensional MOS devices for a complete modeling and fabrication.