Asymmetric Multilayered Gate Dielectric (AMGAD) surrounding gate MOSFET: A new structural concept for enhanced device performance

Author

Kaur, H. ; Kabra, S. ; Haldar, S. ; Gupta, R.S.

Author_Institution

Dept. of Electron. Sci., Univ. Of Delhi, New Delhi

fYear

2008

fDate

21-24 Nov. 2008

Firstpage

764

Lastpage

767

Abstract

A two-dimensional analytical model for asymmetric multilayered gate dielectric surrounding gate MOSFET (AMGAD SGT) is presented and its effectiveness in suppressing short channel effects and hot carrier effects is examined. The expressions for potential and electric field have been obtained and the analysis is extended to obtain the threshold voltage and subthreshold slope of the device. It has been established that incorporation of asymmetric multilayered gate dielectric design leads to enhanced carrier transport efficiency besides also improving the short channel immunity and hot carrier reliability. The model is verified by comparing the analytical results with the simulated data obtained from device simulator ATLAS and a good agreement is found.

Keywords

MOSFET; semiconductor device models; asymmetric multilayered gate dielectric-surrounding gate MOSFET; carrier transport efficiency; device simulator ATLAS; hot carrier effects; short channel effects; two-dimensional analytical model; Analytical models; CMOS technology; Controllability; Dielectric devices; High K dielectric materials; High-K gate dielectrics; Hot carriers; MOSFET circuits; Semiconductor films; Silicon; ATLAS; Asymmetric Multilayered Gate Dielectric; Device modeling; Short channel effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on

Conference_Location

Jaipur

Print_ISBN

978-1-4244-2690-4

Electronic_ISBN

978-1-4244-2691-1

Type

conf

DOI

10.1109/AMTA.2008.4763075

Filename

4763075