Title :
Velocity saturation effect in heterostructure field effect transistors
Author :
Han, C.J. ; Ruden, P.P. ; Nohava, T. ; Narum, D. ; Grider, D. ; Newstrom, K. ; Joslyn, P. ; Shur, M.
Author_Institution :
Honeywell Sensors & Signal Process. Lab., Bloomington, MN, USA
Abstract :
Heterostructure FETs fabricated on a doped InGaAs channel heterostructure yielded device performance superior to that of devices on a conventional superlattice MODFET structure A comparison is made for 0.4-10- mu m-gate-length FETs fabricated with a self-aligned gate process. Transconductance as high as 534 mS/mm was achieved with 0.4- mu m doped channel devices. This device structure achieved better performance through electron velocity saturation during normal device operation. The MODFET structure, in contrast, is limited by charge transfer into the charge control layer and by gate leakage. Ring oscillators fabricated using 0.3*10 mu m/sup 2/ gates on the doped channel structure yielded a minimum gate delay of 8.3 ps at 2.3 mW/gate.<>
Keywords :
III-V semiconductors; field effect integrated circuits; field effect transistors; gallium arsenide; indium compounds; semiconductor doping; 0.4 to 10 micron; 534 mS; 8.3 ps; channel devices; charge control layer; charge transfer; electron velocity saturation; gate delay; gate leakage; heterostructure field effect transistors; ring oscillators; self-aligned gate process; superlattice MODFET structure; transconductance; Charge transfer; Electrons; FETs; Gate leakage; HEMTs; Indium gallium arsenide; MODFETs; Ring oscillators; Superlattices; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74242
