Title :
Band discontinuity and bulk vs. interface recombination in CdS/CuInSe2 solar cells
Author :
Turner, G.B. ; Schwartz, R.J. ; Gray, J.L.
Author_Institution :
ARCO Solar Inc., Camarillo, CA, USA
Abstract :
A numerical model which shows the effects of conduction band discontinuity, Delta cb, in CdS/CuInSe2 solar cells is presented. Two scenarios for the dominant mechanism controlling open-circuit voltage, Voc, are considered: CuInSe2 bulk recombination and CdS/CuInSe2 interface recombination. The computation shows that the short-circuit current is independent of Delta cb for either scenario, while Voc is strongly affected only for the interface-dominated case and only for the CuInSe2 conduction band positive with respect to the CdS conduction band. The experimental evidence implies that interface domination is not always the case in real devices, if it occurs at all.
Keywords :
II-VI semiconductors; band structure of crystalline semiconductors and insulators; cadmium compounds; copper compounds; electron-hole recombination; indium compounds; interface electron states; solar cells; ternary semiconductors; CdS-CuInSe2; bulk recombination; conduction band discontinuity; interface recombination; open-circuit voltage; semiconductor; solar cells; Absorption; Charge carrier lifetime; Circuit simulation; Computer interfaces; Heterojunctions; Lighting; Numerical models; Photovoltaic cells; Poisson equations; Spontaneous emission; Voltage control;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105951
