Title :
On the p-type conduction of cadmium telluride single crystals
Author :
Hsu, T.J. ; Hwang, H.L.
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing-Hua Univ., Hsinchu, Taiwan
Abstract :
Some investigations are presented on the p-type conduction of CdTe single crystals. A model was constructed to describe the atom arrangements in CdTe at various process stages. By using phosphorous implantation and pulse electron beam (PEB) annealing, high hole concentrations were obtained. The electron paramagnetic resonance (EPR) measurements as well as the theoretical calculations of the implant and damage profiles after the implantation and the dopant redistribution profiles after the pulse electron-beam annealing show the significant effect on p-type conduction of melting crystals in the E-beam annealing process.
Keywords :
II-VI semiconductors; cadmium compounds; carrier density; doping profiles; electrical conductivity of crystalline semiconductors and insulators; electron beam annealing; paramagnetic resonance; phosphorus; CdTe; CdTe:P; EPR; atom arrangements; damage profiles; dopant redistribution profiles; electron paramagnetic resonance; high hole concentrations; implant profiles; melting crystals; model; p-type conduction; pulse electron beam annealing; semiconductor; single crystals; Annealing; Atomic measurements; Cadmium compounds; Crystals; Electron beams; Electrons; Implants; Paramagnetic materials; Paramagnetic resonance; Pulse measurements; Satellites; Signal detection; Tellurium;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105958
