A study of thermal performance of packages using a new test die

Author

Pendse, Raj ; Shanker, B.J.

Author_Institution

Nat. Semicond. Corp., Santa Clara, CA, USA

fYear

1988

fDate

10-12 Feb 1988

Firstpage

50

Lastpage

54

Abstract

A test die that uses power diodes for die heating and a string of emitter-base diodes for temperature sensing was designed and used for the thermal characterization of various very large-scale integration (VLSI) packages. The power diode, consisting of 100 minimum-geometry emitters, is contained entirely in the lower portion of the die. The temperature-sensing diodes consist of a string of 17 emitter-base diodes distributed over the die surface. The design allows for localized die heating and mapping of temperature variation over the surface of the die. Results of thermal measurements and die surface temperature mapping performed on a large die simulated by multiple-die assembly are presented and discussed. Topics investigated include package mold compound conductivity and substrate conductivity

Keywords

VLSI; electric sensing devices; integrated circuit testing; semiconductor diodes; temperature measurement; thermal conductivity measurement; thermal variables measurement; VLSI; die heating; die surface temperature mapping; emitter-base diodes; multiple-die assembly; package mold compound conductivity; packages; power diodes; substrate conductivity; temperature sensing; temperature-sensing diodes; test die; thermal conductivity measurement; thermal measurements; thermal performance; very large-scale integration; Assembly; Conductivity; Diodes; Heating; Large scale integration; Packaging; Performance evaluation; Temperature sensors; Testing; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Thermal and Temperature Measurement Symposium, 1988. SEMI-THERM IV., Fourth Annual IEEE

Conference_Location

San Diego, CA

Type

conf

DOI

10.1109/SEMTHE.1988.10596

Filename

10596