Title :
Control of deposition and surface properties of CuInSe2 thin films for solar cells
Author :
McCandless, Brian E. ; Birkmire, Robert W.
Author_Institution :
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
Abstract :
The generation of high-efficiency CuInSe2/(CdZn)S solar cells using CuInSe2 thin films deposited by elemental evaporation in a two-step process is presented. The substrate temperature of the first deposition which is less than 350 degrees C, reduced the growth defect height to less than 3 mu m. The surface structure of the as-grown CuInSe2 films can further be modified by etching in an aqueous bromine solution yielding a specular surface. Specular films provide suitable substrates for high-efficiency ( eta >9%) single and multijunction devices and are used to demonstrate the uniformity of the bulk properties of CuInSe2 films deposited in two steps.
Keywords :
copper compounds; semiconductor growth; semiconductor thin films; solar cells; surface structure; vapour deposition; 9 percent; CdZnS; CuInSe2; deposition; elemental evaporation; etching; growth defect height; high-efficiency; multijunction devices; semiconductor; single junction devices; solar cells; specular films; substrate temperature; surface properties; surface structure; thin films; two-step process; Electron optics; Etching; Optical films; Optical microscopy; Photovoltaic cells; Scanning electron microscopy; Solar power generation; Sputtering; Substrates; Surface morphology; Surface structures; Temperature; Temperature control; Time of arrival estimation;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105962
