DocumentCode :
2511955
Title :
Thermal buckling of silicon sheet
Author :
Tsai, C.T. ; Dillon, O.W. ; De Angelis, R.J.
Author_Institution :
Kentucky Univ., Lexington, KY, USA
fYear :
1988
fDate :
1988
Firstpage :
1545
Abstract :
Results of buckling analyses for three closely related thermal profiles are discussed. They come from the same basic furnace design but reflect changes that occur in the thermal profile when different pull speeds are used to produce wider or thicker ribbon. It is shown that the three profiles differ near the solid-melt interface. Details of the calculation procedure for the in-plane stresses are also given. The shapes associated with the first three modes for each profile are shown. The shape of the first mode for each thermal profile is different. This is primarily due to differing geometry associated with the different pull speeds.
Keywords :
crystal growth from melt; elemental semiconductors; internal stresses; semiconductor growth; silicon; Si sheet; furnace design; in-plane stresses; pull speeds; ribbon; semiconductor; solid-melt interface; thermal buckling; thermal profiles; Boundary conditions; Equations; Furnaces; Geometry; Large-scale systems; Photovoltaic systems; Residual stresses; Shape; Silicon; Solar power generation; Thermal force; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
Type :
conf
DOI :
10.1109/PVSC.1988.105968
Filename :
105968
Link To Document :
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