DocumentCode :
2511967
Title :
Temperature dependence of terahertz radiation detection by field effect transistors
Author :
Klimenko, O.A. ; Teppe, F. ; Knap, W. ; Iniguez, B. ; Coquillat, D. ; Mityagin, Y.A. ; Dyakonova, N.V. ; Videlier, H. ; Lime, F. ; Marczewski, J. ; Kucharski, K.
Author_Institution :
GIS-TERALAB, Univ. Montpellier 2, Montpellier, France
fYear :
2012
fDate :
23-28 Sept. 2012
Firstpage :
1
Lastpage :
2
Abstract :
We have measured the Terahertz photoresponse of three types of FETs as a function of the temperature, to study the change of the dominant current mechanism. For all of them we have compared the photoresponse with its DC transfer characteristics, which is directly proportional to the conductivity.
Keywords :
field effect transistors; terahertz wave detectors; DC transfer characteristics; dominant current mechanism; field effect transistors; temperature dependence; terahertz photoresponse; terahertz radiation detection; FETs; Logic gates; Plasma temperature; Temperature; Temperature dependence; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
ISSN :
2162-2027
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
Type :
conf
DOI :
10.1109/IRMMW-THz.2012.6380333
Filename :
6380333
Link To Document :
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