DocumentCode :
2511972
Title :
Thermal behavior of InGaAs-THz photoconductive antennas
Author :
Peters, O. ; Schwerdtfeger, M. ; Dietz, R.J.B. ; Wilk, R. ; Scheunemann, R. ; Holzwarth, R. ; Koch, M.
Author_Institution :
Fachbereich Phys., Philipps-Univ. of Marburg, Marburg, Germany
fYear :
2012
fDate :
23-28 Sept. 2012
Firstpage :
1
Lastpage :
2
Abstract :
While most scientific experiments take place in a controlled laboratory environment systems for industrial applications have to cope with instable temperatures. We investigate the performance of InGaAs/InAlAs THz antennas for the temperature from -20 to 80 degrees Celsius.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; photoconducting devices; submillimetre wave antennas; InGaAs-InAlAs; THz photoconductive antennas; controlled laboratory environment systems; industrial applications; instable temperatures; temperature -20 degC to 80 degC; thermal behavior; Antenna measurements; Antennas; Detectors; Signal to noise ratio; Temperature distribution; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
ISSN :
2162-2027
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
Type :
conf
DOI :
10.1109/IRMMW-THz.2012.6380334
Filename :
6380334
Link To Document :
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