How HBT parameters influence conversion gain in a Gilbert cell microwave mixer

Author

Pallier, Christine ; Vallette, François ; Vasilescu, Gabriel ; Algani, Catherine

Author_Institution

ENSEA-EMO, Cergy-Pontoise, France

fYear

1997

fDate

24-25 Nov 1997

Firstpage

261

Lastpage

266

Abstract

This paper presents an analysis of the influence of the transistor parameters on conversion gain in a bipolar Gilbert cell mixer. An analytical analysis of the mixer has been performed. It is valid for a down-converter function at microwave frequencies up to transistor transition frequency. It provides analytical expressions of conversion gain versus RF frequency and transistor electrical parameters. A maximum gain and cut-off frequencies have been obtained. These expressions have been used to calculate the gain sensitivities towards transistor parameters. The main influencing parameters are then derived

Keywords

equivalent circuits; heterojunction bipolar transistors; microwave bipolar transistors; microwave mixers; nonlinear network analysis; semiconductor device models; sensitivity analysis; Gilbert cell microwave mixer; HBT parameters; RF frequency; bipolar transistor mixer; conversion gain; down-converter function; gain sensitivities; transistor electrical parameters; Capacitance; Cutoff frequency; Frequency conversion; Heterojunction bipolar transistors; Microwave frequencies; Microwave transistors; Mixers; Performance analysis; Radio frequency; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on

Conference_Location

London

Print_ISBN

0-7803-4135-X

Type

conf

DOI

10.1109/EDMO.1997.668614

Filename

668614