Title :
How HBT parameters influence conversion gain in a Gilbert cell microwave mixer
Author :
Pallier, Christine ; Vallette, François ; Vasilescu, Gabriel ; Algani, Catherine
Author_Institution :
ENSEA-EMO, Cergy-Pontoise, France
Abstract :
This paper presents an analysis of the influence of the transistor parameters on conversion gain in a bipolar Gilbert cell mixer. An analytical analysis of the mixer has been performed. It is valid for a down-converter function at microwave frequencies up to transistor transition frequency. It provides analytical expressions of conversion gain versus RF frequency and transistor electrical parameters. A maximum gain and cut-off frequencies have been obtained. These expressions have been used to calculate the gain sensitivities towards transistor parameters. The main influencing parameters are then derived
Keywords :
equivalent circuits; heterojunction bipolar transistors; microwave bipolar transistors; microwave mixers; nonlinear network analysis; semiconductor device models; sensitivity analysis; Gilbert cell microwave mixer; HBT parameters; RF frequency; bipolar transistor mixer; conversion gain; down-converter function; gain sensitivities; transistor electrical parameters; Capacitance; Cutoff frequency; Frequency conversion; Heterojunction bipolar transistors; Microwave frequencies; Microwave transistors; Mixers; Performance analysis; Radio frequency; Transconductance;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
DOI :
10.1109/EDMO.1997.668614
