DocumentCode :
2512099
Title :
GaN-based nano rectifiers for THz detection
Author :
Sangaré, P. ; Ducournau, G. ; Grimbert, B. ; Brandli, V. ; Faucher, M. ; Gaquière, C.
Author_Institution :
IEMN, Univ. de Lille 1, Villeneuve-d´´Ascq, France
fYear :
2012
fDate :
23-28 Sept. 2012
Firstpage :
1
Lastpage :
2
Abstract :
We present electrical rectification up to 300 GHz with novel asymmetric nanochannels realized for the first time on AlGaN/GaN material system. At zero bias, sensivities of 100 V/W/Hz1/2 are obtained at room temperature.
Keywords :
III-V semiconductors; gallium compounds; rectifiers; terahertz wave detectors; wide band gap semiconductors; AlGaN-GaN; THz detection; asymmetric nanochannels; electrical rectification; material system; nano rectifiers; zero bias; Aluminum gallium nitride; Arrays; Gallium nitride; Materials; Nanobioscience; Temperature measurement; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
ISSN :
2162-2027
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
Type :
conf
DOI :
10.1109/IRMMW-THz.2012.6380340
Filename :
6380340
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2512099
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